suface mount package. s mhop microelectronics c orp. a SP3900 symbol v ds v gs i dm 85 w a p d c 16 -55 to 150 i d units parameter 30 4.5 30 c/w v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 30v 4.5a 74 @ vgs=4.5v 42 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja www.samhop.com.tw jan,23,2014 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w dual n-channel enhancement mode field effect transistor green product 3.6 0.94 e as single pulse avalanche energy d mj 1.47 s1 g1 s2 g2 d1 d1 d2 d2 ver 1.1 dfn 3x3 pin1
symbol min typ max units bv dss 30 v 1 i gss 100 na v gs(th) v 34 g fs s c iss 380 pf c oss 63 pf c rss 46 pf q g 11 nc 11 17 4.6 t d(on) 6 ns t r ns t d(off) ns t f ns v ds =10v,v gs =0v switching characteristics v dd =15v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =2.25a v ds =10v , i d =2.25a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =1.7a 42 55 74 m ohm c f=1.0mhz c SP3900 www.samhop.com.tw jan,23,2014 2 nc q gs nc q gd 1.2 1.7 gate-drain charge gate-source charge v ds =15v,i d =2.25a, v gs =10v drain-source diode characteristics and maximum ratings nc 3.2 v ds =15v,i d =2.25a,v gs =10v v ds =15v,i d =2.25,v gs =4.5v v sd diode forward voltage v gs =0v,i s =1a 0.8 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ _ 1 2.1 3 9 ver 1.1
SP3900 ver 1.1 www.samhop.com.tw jan,23,2014 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 10 8 6 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 20 16 12 8 4 0 0 1 6 5 4 3 2 -55 c 120 100 80 60 40 20 0 2.2 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 2 v gs =3.5v v gs =10v v gs =4.5v 2.0 v gs =4.5v i d =1.7a v gs =10v i d =2.25a v gs =4v v gs =10v 10 8 6 4 2 1 v ds =v gs i d =250ua v gs =4.5v 25 c tj=125 c
SP3900 ver 1.1 www.samhop.com.tw jan,23,2014 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 120 100 80 60 40 20 0 2 46 8 10 0 10 1 00.3 20 1.5 0.6 0.9 1.2 600 500 400 300 200 100 0 10 15 20 25 30 10 8 6 4 2 0 02 4 1 356 0.1 1 10 100 100 10 0.1 0.01 125 c 75 c 25 c i d =2.25a 75 c ciss coss crss 1 10 100 1 10 100 60 6 0 5 r ds (on) lim it td(on) tr td(off ) v gs =10v single pulse t c =25 c dc 1s vds=15v,id=1a vgs=10v tf v ds =15v i d =2.25a 1 1m s 10 0 ms 10ms 25 c 125 c
SP3900 ver 1.1 www.samhop.com.tw jan,23,2014 5 t p v (br )dss i as f igure 13b. o fr m w a ve s u nc l am p ed i n d u ct i ve f igure 13a. u nc l am p e d s in d u ct i ve t e t ci r c u i t r g i as 0.01 t p d.u.t l v ds + - dd 20v v 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance p dm t 1 t 2 1. r ^ ja (t)=r (t) * r ^ ja 2. r ^ ja =s ee datasheet 3. t jm- t a = p dm * r ^ ja (t) 4. duty cycle, d=t 1 /t 2 0.01 0.02 0.5 0.2 0.1 0.05 single pulse 0.001
SP3900 www.samhop.com.tw jan,23,2014 6 package outline dimensions ver 1.1 top view dfn 3x3-8l bottom view side view symbols millimeters a a1 b c d e e1 min max 0.70 0.90 0.00 0.05 0.24 0.35 0.10 0.25 e l l1 3.00 bsc 0.30 0 o nom 0.80 0.30 0.152 1.813 bsc 0.50 0 10 o 3.00 bsc e1 e l1 d e d3 e3 a a1 c d2 e2 2.475 bsc 0.225 bsc 3.20 bsc d1 d2 d1 e2 l b d3 1.063 bsc 0.65 bsc 0.40 0.00 0.100 12 o e3 0.525 bsc
sp8601 www.samhop.com.tw jan,23,2014 7 top marking definition dfn 3x3 pin 1 ver 1.1 3900 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. (a,b...z)
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